Fundamentals of Ultra-Thin-Body Mosfets and Finfets

Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. - Describes FD/SOI MOSFETs and 3-D FinFETs in detail - Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM - Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time - Projects potential nanoscale UTB CMOS performances - Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Author: Jerry G. Fossum, Vishal P. Trivedi
Publisher: Cambridge University Press
Published: 08/29/2013
Pages: 226
Binding Type: Hardcover
Weight: 1.10lbs
Size: 9.70h x 6.70w x 0.60d
ISBN: 9781107030411

About the Author
Fossum, Jerry G.: - Jerry G. Fossum is Distinguished Professor Emeritus of Electrical and Computer Engineering at the University of Florida, Gainesville, and a Fellow of the IEEE. He won the IEEE/EDS J. J. Ebers Award in 2004 for 'outstanding contributions to the advancement of SOI CMOS devices and circuits through modeling'.Trivedi, Vishal P.: - Vishal P. Trivedi is a Member of the Technical Staff and a Distinguished Innovator at Freescale Semiconductor, Inc., and a Senior Member of the IEEE.